| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable reduction of heating in a non-press-contact region having high heat resistance in a diode sealed in a press package.SOLUTION: A semiconductor device has an active region (AR) and a termination region (TR) surrounding the active region (AR). AR has an n-substrate 1, a p-type diffusion layer 2 on one main surface, an n-type high concentration impurity layer 3 on the opposite surface, an anode electrode 5 (AE) having contact with the p-type diffusion layer 2, and a cathode electrode 6 (CE) having contact with the n-substrate 1 and the n-type high concentration impurity layer 3. TR has a guard ring 4 (GR) surrounding the p-type diffusion layer, a channel stopper layer 8 (CS) which surrounds GR and the p-type diffusion layer 2 and is formed at a chip end portion, and a field plate electrode 7 having contact with GR and CS. AE and CE are formed to be conducted to each other by press-contact. The length in the direction parallel to the layer of AE is longer than the n-type high concentration impurity layer 3, so that the n-substrate 1 is connected to the non-press-contact region CE, and electrons injected into the n-substrate 1 of the non-press-contact region are reduced, thereby suppressing heating.</p> |
