TUNGSTEN FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND STORAGE MEDIUM

摘要

Provided is a tungsten film deposition method which can perform film deposition in one step without forming an initial tungsten film for nuclear generation. The tungsten film deposition method according to an embodiment of the present invention supplies tungsten chloride gas and reducing gas as a tungsten raw material under decompression atmosphere on a substrate to be treated, reacts tungsten chloride gas and reducing gas by heating the substrate to be treated, and does film deposition a main tungsten film without film depositing an initial tungsten film for nuclear generation.