| 摘要 |
Embodiments of the present invention are to provide an electronic device including a semiconductor memory capable of preventing a defect in a variable resistance element and enhancing the properties thereof as well as a manufacturing method thereof. According to an embodiment of the present invention, the electronic device including a semiconductor memory, which includes: an interlayer insulation layer formed on a substrate including a first area and a second area; a first contact plug which penetrates the interlayer insulation layer in the second area to be in contact with the substrate; a peeling prevention layer which is formed on the interlayer insulation layer including the first contact plug; a second contact plug which penetrates the interlayer insulation layer and the peeling prevention layer in the first area to be in contact with the substrate; and a variable resistance pattern coming in contact with the second contact plug. |
