METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To solve a problem that an occupied area for circuit patterns increases beyond expectation in association with increase of a memory region in such layout that end part dummy patterns occupying an appreciable area are arranged in the surrounding part of a memory region in a chip mixedly mounted with a logic region and a memory region in order to reduce the phenomenon of fluctuation due to a process since a comparatively irregular logic region and a memory region mostly having comparatively regular parts mixedly exist in many case in a present LSI.SOLUTION: A local density correction amount on the basis of a local pattern data density is added to a memory cell-containing region including a memory cell region in designing data to generate pre-bias data. The contracted projection exposure by ultraviolet exposure light is executed thereto using an optical mask made by generating mask data by a model base OPC operation.