| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of improving operation speed.SOLUTION: A semiconductor memory device of an embodiment includes a plurality of string units, a first register BS_REG, a second register FS_REG, a third register PS_REG, and a control circuit 14. The string units are sets of NAND strings where a plurality of memory cells are laminated. The first register BS_REG can hold information indicating whether or not each of the string units is a bad string. The second register FS_REG can hold information indicating whether or not each of the string units has failed in verification. The third register PS_REG can hold information indicating whether or not each of the string units is a string that has passed in verification. The control circuit skips an erasure verification operation to any of the string units on the basis of the information in the first to third registers. |
