| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive element having perpendicular magnetic anisotropy, and capable of expressing a large magnetoresistive effect, and to provide a magnetic memory using the same.SOLUTION: A magnetoresistive element has a laminate structure including a first magnetic layer containing Mn and at least one element selected from a group of Ga, Ge and Al, a second magnetic layer, a first non-magnetic layer provided between the first magnetic layer and second magnetic layer, a third magnetic layer provided between the first magnetic layer and first non-magnetic layer, and a second non-magnetic layer provided between the first magnetic layer and third magnetic layer and containing at least one element selected from a group of Mg, Ba, Ca, C, Sr. Sc, Y, Nb, Gd, Tb, Dy, Ce, Ho, Yb, Er and B. |
