NON VOLATILE MEMORY AND PROGRAM METHOD OF THE SAME

摘要

A program method of a non-volatile memory comprises the following steps: applying a program pulse to a program cell at least once until threshold voltage of the program cell reaches preliminary target voltage lower than target voltage in the state of applying first voltage to a bit line corresponding to the program cell; and applying the program pulse to the program cell the predetermined number of times in the state of applying second voltage higher than the first voltage to the bit line after the threshold voltage of the program cell reaches the preliminary target voltage.