| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having high withstand voltage.SOLUTION: According to an embodiment, a semiconductor comprises a first semiconductor layer, a first electrode and a second electrode. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the first semiconductor layer and separated from the first electrode in a second direction crossing a first direction from the first semiconductor layer toward the first electrode. the first electrode includes a first electrode layer which contains a first metal and a second electrode layer which is provided between the first electrode layer and the first semiconductor layer and contains a second metal having a melting point lower than that of the first metal. A first distance between the first electrode layer and the second electrode along the second direction is shorter than a distance between the second electrode layer and the second electrode along the second direction.</p> |
