METHOD OF MANUFACTURING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF MANUFACTURING SOLID-STATE IMAGING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor epitaxial wafer that has a high gettering capability and that can suppress generation of epitaxial defects.SOLUTION: A method of manufacturing a semiconductor epitaxial wafer 100 includes: a cluster ion irradiation step of irradiating a surface 10A of a semiconductor wafer 10 with a cluster ion 16; a monomer ion implantation step of implanting a monomer ion 17 consisting of a dopant element, from the surface 10A of the semiconductor wafer 10; and a step of forming an epitaxial layer 20 on the surface 10A of the semiconductor wafer 10 subjected to the irradiation step and the implantation step. At the monomer ion implantation step, a peak of a concentration profile is determined at a position separated by 300 nm or more from the surface 10A in a thickness direction of the semiconductor wafer 10, and then the implantation is performed.