| 摘要 |
PROBLEM TO BE SOLVED: To provide an In-Ga-Zn-O-based oxide semiconductor material and a semiconductor element, which has the combination of n-type characteristic and p-type characteristic.SOLUTION: An oxide semiconductor material includes In, Ga, Zn and O as constituents and has p-type characteristic and n-type characteristic depending on a direction of electric field. In, Ga, Zn and O are molecularly bonded with each other on a substrate and can be used as a semiconductor element. For example, by forming a source and a drain which have a channel layer composed of the oxide semiconductor material, a function as a CMOS can be achieved by switching positive and negative of voltage applied to a gate. |
