| 摘要 |
An epitaxial growth method according to an embodiment of the present invention uses an epitaxial growth apparatus including a process chamber which comprises an upper epitaxial film forming room and a lower epitaxial film forming room by a susceptor where a wafer for epitaxial film growth is arranged. The epitaxial growth method of the present invention includes: a step of supplying a gas into the process chamber for epitaxial film growth on the wafer; a step in which a gate valve is opened and the wafer is loaded on the susceptor; a step in which the gate valve is closed and an epitaxial film is grown on the wafer; and a step in which the gate valve is opened again and the wafer of the susceptor is unloaded, after the epitaxial layer growth is completed. When the gate valve is open, a delta pressure is maintained to have a negative value by controlling the amount of the gas supplied to the upper epitaxial film forming room and the lower epitaxial film forming room. The epitaxial growth apparatus and the epitaxial growth method according to the embodiment has the advantage of being able to improve wafer quality, by preventing the wafer from being contaminated by impurities. |
