发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that achieves excellent charge retention characteristics.SOLUTION: The nonvolatile semiconductor memory device of the embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecule layer, provided between the semiconductor layer and the control gate electrode, having organic molecules containing a porphyrin structure at a center of oxy metal or chloro metal. |
申请公布号 |
JP2015177127(A) |
申请公布日期 |
2015.10.05 |
申请号 |
JP20140054068 |
申请日期 |
2014.03.17 |
申请人 |
TOSHIBA CORP |
发明人 |
TERAI KATSUYA;TADA TSUKASA;NISHIZAWA HIDEYUKI;HATTORI SHIGEKI;ASAKAWA KOUJI |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L27/28;H01L29/788;H01L29/792;H01L51/05 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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