发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that achieves excellent charge retention characteristics.SOLUTION: The nonvolatile semiconductor memory device of the embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecule layer, provided between the semiconductor layer and the control gate electrode, having organic molecules containing a porphyrin structure at a center of oxy metal or chloro metal.
申请公布号 JP2015177127(A) 申请公布日期 2015.10.05
申请号 JP20140054068 申请日期 2014.03.17
申请人 TOSHIBA CORP 发明人 TERAI KATSUYA;TADA TSUKASA;NISHIZAWA HIDEYUKI;HATTORI SHIGEKI;ASAKAWA KOUJI
分类号 H01L21/336;H01L21/8247;H01L27/115;H01L27/28;H01L29/788;H01L29/792;H01L51/05 主分类号 H01L21/336
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