| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high withstand voltage.SOLUTION: A semiconductor device including a first region and a second region comprises: a first electrode 1; a first conductivity type first semiconductor layer 2; a second conductivity type second semiconductor layer 4; a first conductivity type third semiconductor layer provided on the second semiconductor layer in the second region; a plurality of second electrodes 6 which are opposite to the second semiconductor layer and the first semiconductor layer in the first region, and the third semiconductor layer in the second region and the third semiconductor layer, the second semiconductor layer and the fist semiconductor layer via a first insulation film 11 and which straddle the first region and the second region; a plurality of third electrodes 7 with parts straddling the first region and the second region via a second insulation film 12 and with the other part being provided at a distance from each other in the second region; a third insulation film 14 provided in the first region; a fourth electrode 8; a fourth insulation film provided in the second region; and a fifth electrode. |
