发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus in which adhesion of foreign matters to a processed substrate can be reduced.SOLUTION: A plasma processing apparatus has a processing chamber 103 for processing a processed substrate by using plasma, a transfer chamber 105 connected with the processing chamber, a passage connecting the processing chamber and transfer chamber, and a detachable cover arranged in the passage. The cover has more than one split structure, where one split cover 302 covers the inner wall of the passage, and the other cover 303 seals the passage on the transfer chamber side.</p>
申请公布号 JP2015177108(A) 申请公布日期 2015.10.05
申请号 JP20140053680 申请日期 2014.03.17
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 NUNOMURA NOBUHIDE
分类号 H01L21/3065;H01L21/677 主分类号 H01L21/3065
代理机构 代理人
主权项
地址