发明名称 MICROWAVE HEATING METHOD AND MICROWAVE HEATING APPARATUS
摘要 The purpose of the present invention is to efficiently perform an annealing process on a film, as an annealing target, within a short time while preventing negative effects of excessive microwave irradiation. A microwave heating treatment method includes: a first step of heating an object to be treated which has the film, as an annealing target, and a substrate main body on which the film as an annealing target is formed by irradiating the substrate main body with microwaves; and a second step of stopping irradiation of microwaves. Conversion from the first step to the second step is performed at time t2 or less when or after a temperature (T1) of the film to be annealed is the same as a target temperature (T) for heating the film to be annealed or higher. The time t2 is shorter than t4 when a temperature (T2) of the substrate main body reaches the highest level. Preferably ΔT is maximized at t2.
申请公布号 KR20150111284(A) 申请公布日期 2015.10.05
申请号 KR20150034514 申请日期 2015.03.12
申请人 TOKYO ELECTRON LIMITED 发明人 IWAI TAKAAKI
分类号 H01L21/324;H01L21/268 主分类号 H01L21/324
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