发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the size of a semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming grooves on a surface of a semiconductor substrate in a reticular pattern; laminating a plurality of semiconductor chips on regions on the semiconductor substrate, which are surrounded by the grooves to form laminates; forming first encapsulation resin layers to cover spaces among the plurality of semiconductor chips and lateral faces of the plurality of semiconductor chips on regions surrounded by the grooves; separating the semiconductor substrate on the basis of the laminates; mounting the laminates on a wiring board so as to place the semiconductor chips on the wiring board side; forming a second encapsulation resin layer for encapsulating the laminates on the wiring board; separating the wiring board on the basis of the laminates; and cutting after forming the first encapsulation resin layer and before separating the wiring board, a part of the semiconductor substrate in a thickness direction from a surface of the semiconductor substrate on the side opposite to a surface where the laminates are formed.
申请公布号 JP2015177062(A) 申请公布日期 2015.10.05
申请号 JP20140052716 申请日期 2014.03.14
申请人 TOSHIBA CORP 发明人 SATO TAKAO
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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