| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving element capable of improving high-speed responsiveness with an element having a small light reception diameter.SOLUTION: A semiconductor light receiving element 20 comprises a semiconductor substrate 6 that has a front face 6a and a rear face 6b and that is formed of n-type InP. On the front face 6a of the semiconductor substrate 6, a light absorption layer 5 formed of InGaAs and a window layer 4 formed of InP are laminated. The light absorption layer 5 has a bandgap smaller than that of incident light. A light reception part 3 is formed at a part of the window layer 4 by Zn selection diffusion and the like, and this part becomes a light receivable part. A p-type InGaAs contact layer 2 is laminated so as to be contacted with at least a part of the light reception part 3, and a p-type electrode 1 is laminated so as to be contacted with the contact layer 2. A region where light enters, of the rear face 6b of the semiconductor substrate 6 is made rougher than an epitaxial growth surface. A reflection prevention film 8 is formed on the rear face 6b. A light shielding and contact electrode 7 is formed around the light reception part 3. |
