| 摘要 |
The present invention relates to an operation method of a storage device, wherein the storage device comprises: at least one nonvolatile memory device vertically formed on a substrate, and including a plurality of strings connected between bit lines and a common source line; and a memory controller which controls the nonvolatile memory device. According to the present invention, the operation method comprises the following steps: reading a process capability index which indicates a degree at which a structure related to a memory cell to be operated, is out of a target shape; controlling at least one operation condition based on the read process capability index; and operating the storage device according to the controlled operation condition. |
