发明名称 INFRARED SENSOR CHIP
摘要 An infrared sensor module is provided. The infrared sensor module which applies bias power when infrared light is irradiated, then integrates an increased amount of current flowing in an active cell according to the decrease in resistance value by a predetermined time to generate an output signal, and outputs the signal, the infrared sensor comprising: a black cell, the resistance value of which is decreased only by bias power; an integrator which generates an offset of the black cell that has a value obtained by integrating the increase amount of current flowing in the black cell according to the decrease of resistance value based on the bias power; and an infrared signal generating unit which generates only an infrared signal based on infrared light by removing the offset of the active cell from the output signal by using a variation amount of the generated offset of the black cell, wherein the black cell has the same thermal conductivity and thermal time constant as those of the active cell and includes an infrared sensor module which is configured so as not to allow infrared light to pass, and the black cell has the same thermal conductivity and thermal time constant as those of the active cell and is configured so as not to allow infrared light to pass, thereby miniaturizing the infrared sensor module, decreasing power consumption, and increasing durability.
申请公布号 KR101556926(B1) 申请公布日期 2015.10.05
申请号 KR20140053248 申请日期 2014.05.02
申请人 发明人
分类号 G01J5/02 主分类号 G01J5/02
代理机构 代理人
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