| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that is enhanced in light characteristic.SOLUTION: A semiconductor light emitting device has a laminate containing an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The laminate has a first face and a second face at the opposite side to the first face. The semiconductor light emitting device further has an n-side wiring portion electrically-connected to the n-type semiconductor layer and a p-side wiring portion electrically-connected to the p-type semiconductor layer at the second face side, a first insulating membrane which is provided to be in contact with the outer edge portion of the first face and surround the first face, has a wall face located inside the outer edge portion of the first face, and transmits therethrough radiation light of the light emitting layer, and a resin layer which is provided on the first face to cover the wall face, and transmits the radiation light of the light emitting layer. |
