TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

Provided is a method for manufacturing a transistor. The method for manufacturing a transistor comprises the following steps of: forming a pin part protruding from a substrate; forming an element separation pattern covering a sidewall of the pin part on the substrate; forming a trench in the element separation pattern and exposing an upper surface and sidewalls of a channel area of the pin part by the trench; and increasing the volume of the channel area of the pin part by injecting a group 4 element into the channel area of the pin part.