发明名称 MEMORY SYSTEM AND OPERATION METHOD THEREOF
摘要 The present invention relates to an operation method of a memory system including a nonvolatile memory apparatus having memory cells connected to a plurality of word lines. The operation method comprises the following steps: precharging a word line selected among the word lines; sensing a change in voltage or current of the selected word line after the selected word line is floated; generating information on a progressive error depending on the sensed change in voltage or current; and determining the state of the selected word line or a memory block including the selected word line according to the information on the progressive error.
申请公布号 KR20150110885(A) 申请公布日期 2015.10.05
申请号 KR20140032879 申请日期 2014.03.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, YOON HEE;BYEON, DAE SEOK;JEON, BYUNG GIL
分类号 G11C29/00;G11C16/02 主分类号 G11C29/00
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