| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of easily forming wiring on a semiconductor layer between an electrode supplied with first potential and an electrode supplied with second potential.SOLUTION: According to one embodiment, a semiconductor device comprises: first and second electrodes of first potential, which extend in a first direction; third and fourth electrodes of second potential different from the first potential, which extend in the first direction and which are arranged to sandwich the first electrode; and fifth and sixth electrodes of the first potential, which extend in the first direction and which are arranged to sandwich the second electrode. In addition, the semiconductor device comprises a semiconductor layer provided between either of the third or fourth electrodes and either of the firth or sixth electrodes, and first wiring of the first potential which is provided on the second, fifth and sixth electrodes and on the semiconductor layer. |
