| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage element and a nonvolatile storage device which are highly reliable.SOLUTION: There is provided a magnetic storage element including a laminate that includes a first lamination part and a second lamination part. The first lamination part includes a first ferromagnetic layer whose magnetization direction is fixed and a second ferromagnetic layer whose magnetization direction is variable and where magnetic resonance frequency is first frequency. The magnetization direction of the second ferromagnetic layer changes to a direction in accordance with the direction of a first current when the first current flows in a lamination direction and a magnetic field of the first frequency is applied and, when a second current smaller than the first current flows, does not change to a direction in accordance with the second current. The second lamination part is laminated with the first lamination part and includes a third ferromagnetic layer whose magnetization direction is variable. The third ferromagnetic layer can generate a magnetic field of the first frequency by the second current flowing. By flowing the current in the laminate along the lamination direction, the direction of magnetization of the second ferromagnetic layer can be determined to be a direction in accordance with the current direction. |
