| 摘要 |
PROBLEM TO BE SOLVED: To allow for further enhancement of the reliability of an inversion type avalanche photodiode.SOLUTION: An electric field relaxation layer 107 and the layers thereabove are arranged on the inside of the lower layer of the electric field relaxation layer 107, and the electric field relaxation layer 107 and the layers thereabove are formed in a smaller area than a light absorption layer 103, and arranged on the inside of the region for forming the light absorption layer 103, in the plan view. The electric field relaxation layer 107 is brought into a state of lower electric field strength than an avalanche layer 105 during operation. |
