TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE INCLUDING TRANSISTOR

摘要

Disclosed are a transistor, a manufacturing method thereof, and an electronic device including the same. The disclosed transistor includes an impurity metal-containing region on the surface part of a gate insulation layer or the surface part of a channel layer. The impurity metal-containing region is formed on an interface between the channel layer and the gate insulation layer. For example, the impurity metal-containing region is an Fe-containing region. The channel layer is an inorganic semiconductor. For example, the channel layer includes at least one of an oxide semiconductor, a nitric oxide semiconductor, a nitric oxide semiconductor with fluorine, a nitric semiconductor, and a nitric semiconductor with fluorine.