A METHOD OF FABRICATING AN INTEGRATED CIRCUIT WITH ENHANCED DEFECT REPAIRABILITY

摘要

Provided according to one embodiment of the present invention is a method for extreme ultraviolet lithography (EUVL) process. The method includes the step of loading a mask to a lithography system. The mask includes defect-repaired regions and defines an integrated circuit (IC) pattern thereon. The method also includes the following steps: setting an illuminator of the lithography system in an illumination mode according to the IC pattern; configuring a pupil filter in the lithography system depending on the illumination mode; and performing a lithography exposure process on a target with the mask and the pupil filter by the lithography system in the illumination mode.