| 摘要 |
The invention relates to a solid-state imaging device. According to one embodiment of the present invention, the invention comprises: a pixel array unit having a pixel, which accumulates photoelectric conversion charges, arranged in a matrix form having m (m is a positive integer) columns x n (n is a positive integer) rows; a column ADC circuit for calculating an AD conversion value of a pixel signal for each column based on a comparison result of the pixel signal read from the pixel, and a reference voltage; a redundancy column ADC circuit capable of recovering the column ADC circuit for each column; and a column selection circuit capable of selection for each column so that a pixel signal inputted to the column ADC circuit can also be inputted to the redundancy column ADC circuit. |
