发明名称 METHOD OF DRIVING VERTICAL HEAT TREATMENT APPARATUS, RECORDING MEDIUM, AND VERTICAL HEAT TREATMENT APPARATUS
摘要 The present invention suppresses an adhesion of a particle to a substrate in comprehensively performing a deposition treatment on a plurality of substrates within a reaction tube having a bell shape. When comprehensively performing a deposition treatment of a silicon nitride film within a reaction tube (12) with respect to a plurality of wafers (W) stacked on a wafer boat (11), a cooling jig (3) different from the wafer boat (11) is installed. Then, upon completing a disposition treatment, the coolant jig (3) in place of the wafer boat (11) is introduced to the reaction tube (12) and based on a temperature difference between the coolant jig (3) and the reaction pipe (12), attachments (200) adhered to an inner wall surface of the reaction tube (12) are peeled off. In addition, the attachments (200) floating in the reaction tube (12) as a particle (10) peeled off from the inner wall surface are adhered to the coolant jig (3) by means of thermophoresis.
申请公布号 KR20150110338(A) 申请公布日期 2015.10.02
申请号 KR20150034578 申请日期 2015.03.12
申请人 TOKYO ELECTRON LIMITED 发明人 MOTOYAMA YUTAKA;FUKUSHIMA KOHEI;SUZUKI KEISUKE;TAKAHASHI HIROMI
分类号 H01L21/22;H01L21/324;H01L21/677;H01L21/683 主分类号 H01L21/22
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