| 摘要 |
The present invention relates to a solid-state imaging device. According to one embodiment of the present invention, the invention comprises: a pixel array unit having a pixel, which accumulates photoelectric conversion charges, arranged in a matrix form in a column and a row direction; a column ADC circuit for calculating an AD conversion value of a pixel signal for each column based on a comparison result of the pixel signal read from the pixel, and a reference voltage; a vertical signal line for transferring a pixel signal read from the pixel to the column ADC circuit for each of the columns; and a load circuit disposed by being distributed in a row direction and thereby configuring a source follower circuit between the load circuit and the pixel wherein it is possible to read a pixel signal for each column in the vertical signal line from the pixel. |
