| 摘要 |
According to an embodiment of the present invention, a semiconductor light emitting element comprises a first semiconductor layer, a second semiconductor layer, and a light emitting unit. The first semiconductor layer contains an n-type impurity having a first concentration. The second semiconductor layer contains a p-type impurity. The light emitting unit is disposed between the first semiconductor layer and the second semiconductor layer. The light emitting unit comprises: a first barrier layer; a second barrier layer disposed between the first barrier layer and the second semiconductor layer; a third barrier layer disposed between the second barrier layer and the second semiconductor layer; a first well layer disposed between the first barrier layer and the second barrier layer; and a second well layer disposed between the second barrier layer and the third barrier layer. A plane containing a boundary between the first barrier layer and the first well layer intersect a plane containing a surface of the first semiconductor layer (0001). |
