| 摘要 |
The present invention provides a cleaning method of a silicon oxide film forming apparatus, a silicon oxide film forming method and a silicon oxide film forming apparatus wherein it is possible to suppress an occurrence of a particle even in a low temperature such as RT and thereby, possible to enhance productivity. The cleaning method of a silicon oxide film forming apparatus according to an embodiment of the present invention supplies a process gas into a reaction chamber of the silicon oxide film forming apparatus and thereby, forms a silicon oxide film in an object to be treated and then, removes attachments attached to an interior of the apparatus, the method comprising: an oxidation step of supplying an oxidation gas into the reaction chamber and thereby oxidizing attachments attached to an interior of the apparatus; and a cleaning step of supplying a cleaning gas into the reaction chamber and removing attachments oxidized in the oxidation process and thereby cleaning an interior of the apparatus. |
