METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

The present invention obtains a method for manufacturing a silicon carbide semiconductor device capable of improving the reliability of a product. First, a silicon carbide single crystal substrate (1) with a flatness with an average roughness of 0.2mm or less is prepared. And then, the surface of the silicon carbide single crystal substrate is gas-etched under an atmosphere of a reducing gas. A silicon carbide layer (6) is epitaxially etched on the surface of the silicon carbon single crystal substrate (1) after the gas-etching. Wherein, an etching rate of the gas-etching is between 0.5um/h and 2.0um/h.