SEMICONDUCTOR DEVICE HAVING SUBTHRESHOLD OPERATING CIRCUITS INCLUDING A BACK BODY BIAS POTENTIAL BASED ON TEMPERATURE RANGE

摘要

A semiconductor device that may include at least one temperature sensing circuit is disclosed. The temperature sensing circuits may be used to control various operating parameters to improve the operation of the semiconductor device over a wide temperature range. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at other operating temperatures. The temperature sensing circuit may provide a plurality of temperature ranges for setting the operational parameters. Each temperature range can include a temperature range upper limit value and a temperature range lower limit value and adjacent temperature ranges may overlap. The temperature ranges may be set in accordance with a count value that can incrementally change in response to the at least one temperature sensing circuit.

主权项

1. A device that operates over a plurality of predetermined temperature ranges, comprising:
at least one subthreshold operating circuit including at least one first insulated gate field effect device (IGFET) having a first conductivity type; wherein the at least one first IGFET having the first conductivity type is coupled to receive a first back body bias potential that changes according to the temperature range in which the device is operating.