RADIATION AND TEMPERATURE HARD MULTI-PIXEL AVALANCHE PHOTODIODES

摘要

The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

主权项

1. A photon counting avalanche photodiode device comprising:
a substrate having a pixel matrix of transistor structures on a top surface of the substrate; an avalanche region above the substrate comprising doped coalesced nanocolumns having a matching pixel matrix; an absorption region with a matching pixel matrix further comprising:
a grading layer on top of the avalanche region,a superlattice layer on top of the grading layer,a capping layer on top of the superlattice layer; and a plurality of Ohmic contacts that provide individual addressing to the transistor and avalanche photodiode structure pixels.