IMAGING DEVICE

摘要

An imaging device which is capable of taking images with high quality and can be manufactured at low cost is provided. An imaging device includes a first layer, a third layer and a second layer which is located between the first layer and the second layer. The first layer includes a first transistor, the second layer includes a second transistor, and the third layer includes a photodiode. A channel formation region of the first transistor includes silicon. A channel formation region of the second transistor includes an oxide semiconductor. The photodiode has a PIN structure and includes amorphous silicon.

主权项

1. An imaging device comprising:
a first layer including a first transistor; a second layer including a second transistor; and a third layer including a photodiode having a PIN structure, wherein the second layer is provided between the first layer and the third layer, wherein the first transistor is a component of a first circuit, wherein the second transistor and the photodiode are components of a second circuit, wherein the first circuit has a structure capable of driving the second circuit, wherein a first channel formation region of the first transistor includes silicon, wherein a second channel formation region of the second transistor includes an oxide semiconductor, and wherein the photodiode includes amorphous silicon including an i-type region.