VERTICAL GATE TRANSISTOR AND PIXEL STRUCTURE COMPRISING SUCH A TRANSISTOR

摘要

The present disclosure relates to a photodiode comprising: a P-conductivity type substrate region, an electric charge collecting region for collecting electric charges appearing when a rear face of the substrate region receives light, the collecting region comprising an N-conductivity type region formed deep in the substrate region, an N-conductivity type read region formed in the substrate region, and an isolated transfer gate, formed in the substrate region in a deep isolating trench extending opposite a lateral face of the N-conductivity type region, next to the read region, and arranged for receiving a gate voltage to transfer electric charges stored in the collecting region toward the read region.

主权项

1. A device, comprising:
a substrate that includes a P-conductivity type substrate region, the P-conductivity type substrate region having a first surface that is opposite to a second surface; a first electric charge collecting region and a second electric charge collecting region, each configured to collect electric charges when the second surface of the substrate region receives light, the first and second collecting regions each including an N-conductivity type region formed in the substrate region, each N-conductivity type region being spaced from the first surface of the substrate region and spaced from the second surface of the substrate region; an N-conductivity type read region, formed in the substrate region and positioned between the first and second collecting region; a deep isolating trench positioned between the N-conductivity type regions of the first and second collecting regions; and a first isolated transfer gate and a second isolated transfer gate, disposed in the substrate region between the first and second collecting regions and next to the read region, and the first and second transfer gates being configured to receive a gate voltage to transfer electric charges stored in the first and second collecting regions, respectively toward the read region, the first and second transfer gates being formed in a deep isolating trench.