发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a stacked semiconductor device having two or more wafers may include forming a conductor on an upper wafer, the conductor configured to electrically connect input terminals together that have no input protection circuit against ESD; forming front side micro-bumps on a front side of the upper wafer, the front side micro-bumps configured to electrically connect to back side micro-bumps on the upper wafer; forming a TSV structure, the TSV structure configured to facilitate electrical connections between the front and the back side of the upper wafer; forming back side micro-bumps on the back side of the upper wafer, the back side micro-bumps configured to electrically connect with front side micro-bumps on the lower wafer; stacking the upper wafer on the lower wafer; and separating the conductor such that each of the input terminals are electrically independent from other ones of the input terminals. |
申请公布号 |
US2015279881(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201314437445 |
申请日期 |
2013.10.22 |
申请人 |
SHIZUKUISHI Makoto |
发明人 |
Shizukuishi Makoto |
分类号 |
H01L27/146;H01L21/3213;H01L21/82;H01L21/768 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of manufacturing a stacked semiconductor device including two or more wafers, the method comprising:
forming a conductor on an upper wafer, the conductor configured to electrically connect input terminals together that have no input protection circuit against ESD; forming front side micro-bumps on a front side of the upper wafer, the front side micro-bumps configured to electrically connect to back side micro-bumps on the upper wafer; forming a TSV structure, the TSV structure configured to facilitate electrical connections between the front and the back side of the upper wafer; forming back side micro-bumps on the back side of the upper wafer, the back side micro-bumps configured to electrically connect with front side micro-bumps on the lower wafer; stacking the upper wafer on the lower wafer; and separating the conductor such that each of the input terminals are electrically independent from other ones of the input terminals. |
地址 |
Aoba-ku, Sendai Miyagi JP |