| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a novel structure, which can retain the memory content during a memory retention period even in a state where power is not supplied and which has no limits in the number of write times.SOLUTION: The semiconductor device comprises: a first transistor having a first source electrode and a first drain electrode, a first channel formation area electrically connected with the first source electrode and the first drain electrode, in which an oxide semiconductor material is used, a first gate insulation layer on the first channel formation region and a first gate electrode on the first gate insulation layer; and a capacitative element. One of the first source electrode and the first drain electrode of the first transistor and one of electrodes of the capacitative element are electrically connected. |
