| 发明名称 |
Kerf Preparation for Backside Metallization |
| 摘要 |
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes attaching a substrate to a carrier using an adhesive component and forming a through trench through the substrate to expose the adhesive component. At least a portion of the adhesive component is etched and a metal layer is formed over sidewalls of the through trench. |
| 申请公布号 |
US2015279740(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201414226666 |
申请日期 |
2014.03.26 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Roesner Michael;Engelhardt Manfred;Schmid Johann;Stranzl Gudrun;Hirschler Joachim |
| 分类号 |
H01L21/78;H01L21/768 |
主分类号 |
H01L21/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, the method comprising:
attaching a substrate to a carrier using an adhesive component; forming a through trench through the substrate to expose the adhesive component; etching at least a portion of the adhesive component; and forming a metal layer over sidewalls of the through trench. |
| 地址 |
Neubigerg DE |
