发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device provided with a stack of a first film substantially free of oxygen and a second film disposed above the first film and comprising a metal oxide containing an uneasily etched material is disclosed. The method includes etching the second film by a first process using a first etch gas containing a boron trichloride containing gas and by a second process following the first process using a second etch gas containing an inert gas. In the second process, the second etch gas is used while a bias power is controlled to be equal to or greater than an etching threshold energy of the second film. |
申请公布号 |
US2015279697(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201514644908 |
申请日期 |
2015.03.11 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
MATSUDA KAZUHISA;Sasaki Toshiyuki;Omura Mitsuhiro |
分类号 |
H01L21/3213;H01L21/311 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device provided with a stack of a first film substantially free of oxygen and a second film disposed above the first film and comprising a metal oxide containing an uneasily etched material, the method comprising:
etching the second film by a first process using a first etch gas containing a boron trichloride containing gas and by a second process following the first process using a second etch gas containing an inert gas, the second etch gas being used in the second process while controlling a bias power to be equal to or greater than an etching threshold energy of the second film. |
地址 |
Tokyo JP |