METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a method for manufacturing semiconductor device includes: forming a mask layer on a layer to be used as an etching object, the mask layer having a first surface and a second surface, a first hole or trench being provided to pierce the mask layer; forming a second hole or trench in the layer by etching the layer exposed from the first hole or trench, and forming an eave portion on a side wall of the first hole or trench to make an opening of the first hole or trench narrow without plugging the first hole or trench; and supplying an etching gas including obliquely-incident ions into the second hole or trench under the cave portion, and etching a side wall of the second hole or trench with the etching gas.;15

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a mask layer on a layer to be used as an etching object, the mask layer having a first surface and a second surface, the second surface being on a side opposite to the first surface, a first hole or a first trench being provided to pierce the mask layer from the first surface to the second surface; forming a second hole or a second trench in the layer by etching the layer exposed from the first hole or the first trench, and forming an eave portion on a side wall of the first hole or a side wall of the first trench to make an opening of the first hole or first trench narrow without plugging the first hole or the first trench; and supplying an etching gas including obliquely-incident ions into the second hole or into the second trench under the eave portion, and etching a side wall of the second hole or a side wall of the second trench with the etching gas.