METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

摘要

A halogen element-containing metal material and a nitrogen-containing material are alternately supplied to a process chamber with a flow rate of an inert gas supplied to the process chamber together with the nitrogen-containing material during the supplying of the nitrogen-containing material to the process chamber being more increased than a flow rate of the inert gas supplied to the process chamber together with the metal material during the supplying of the metal material to the process chamber.

主权项

1. A method of manufacturing a semiconductor device, comprising:
supplying a halogen-containing metal material containing a metal element and a halogen element to a substrate while supplying an inert gas; and supplying a reactant gas containing a nitrogen element to the substrate while supplying the inert gas at a flow rate larger than a flow rate of the inert gas supplied during the supplying of the halogen-containing metal material.