| 发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF |
| 摘要 |
An exemplary embodiment provides a thin film transistor array panel, including: a substrate; an oxide semiconductor layer disposed on the substrate; an insulating layer disposed on the oxide semiconductor layer; and a pixel electrode disposed on the insulating layer. The oxide semiconductor layer includes a first layer and a second layer disposed on the first layer, the second layer includes an oxide semiconductor including silicon, and the second layer contacts the insulating layer. |
| 申请公布号 |
US2015279673(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201414463581 |
申请日期 |
2014.08.19 |
| 申请人 |
Samsung Display Co., Ltd. |
发明人 |
LEE Hyoung-Rae;KIM Moon Ju;KIM Eun Suk;YOON Seok-Kun;LEE Kwang Youl;CHOO Jong-Won |
| 分类号 |
H01L21/02;C23C14/08;C23C14/34;H01L27/12;H01J37/34 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor array panel comprising:
a substrate; an oxide semiconductor layer disposed on the substrate; an insulating layer disposed on the oxide semiconductor layer; and a pixel electrode disposed on the insulating layer, wherein the oxide semiconductor layer includes a first layer and a second layer disposed on the first layer, the second layer comprises an oxide semiconductor including silicon, and the second layer contacts the insulating layer. |
| 地址 |
Yongin-City KR |
