发明名称 |
Novel Method to Grow In-Situ Crystalline IGZO |
摘要 |
A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment. |
申请公布号 |
US2015279670(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201414549158 |
申请日期 |
2014.11.20 |
申请人 |
Intermolecular Inc. |
发明人 |
Cho Seon-Mee;Brinkley Stuart;Duong Anh;Gharghi Majid;Lee Sang;Le Minh Huu;Littau Karl;Su Jingang |
分类号 |
H01L21/02;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
providing a substrate; providing a first physical vapor deposition target, wherein the first physical vapor deposition target comprises In, Ga, and Zn; providing a second physical vapor deposition target, wherein the second physical vapor deposition target comprises Zn; forming a metal-based semiconductor layer above a surface of the substrate, wherein the forming is performed using the first physical vapor deposition target and the second physical vapor deposition target. |
地址 |
San Jose CA US |