COMBINED INDUCTIVE AND CAPACITIVE SOURCES FOR SEMICONDUCTOR PROCESS EQUIPMENT

摘要

A chamber for processing a substrate is provided. The chamber includes a chamber body having one or more sidewalls and a bottom with a substrate support disposed inside the chamber body. The chamber also includes a showerhead disposed above the substrate support. The showerhead includes a showerhead faceplate that faces the substrate support and is electrically coupled to a capacitive RF power source. A space between the substrate support and the showerhead faceplate defines a processing volume. The chamber further includes one or more coils disposed outside the processing volume at a vertical location between the substrate support and the showerhead. The one or more coils are electrically coupled to one or more inductive RF power sources.

主权项

1. A chamber for processing a substrate, comprising:
a chamber body having one or more sidewalls and a bottom; a substrate support disposed inside the chamber body; a showerhead disposed above the substrate support, the showerhead having a showerhead faceplate electrically coupled to a capacitive RF power source, wherein the showerhead faceplate faces the substrate support and a space between the substrate support and the showerhead faceplate defines a processing volume; and one or more coils disposed outside the processing volume at a vertical location between the substrate support and the showerhead faceplate, wherein the one or more coils are electrically coupled to one or more inductive RF power sources.