| 摘要 |
The present invention is a pattern forming method which comprises: a step for forming a resist underlayer film on one surface of a substrate; a step for forming a silicon-containing film on a surface of the resist underlayer film, said surface being on the reverse side of the substrate-side surface; and a step for removing the silicon-containing film with use of a basic aqueous solution. This pattern forming method does not comprise a step for processing the silicon-containing film with use of a processing liquid containing an acid or a fluorine compound after the silicon-containing film formation step and before the silicon-containing film removal step. It is preferable that the silicon-containing film is formed of a hydrolysis-condensation product of a composition that contains a compound represented by formula (1) in an amount of 60% by mole or more of all silicon compounds. SiX4 (1) (In formula (1), X represents a halogen atom or -OR2; and R2 represents a monovalent organic group.) |
