发明名称 |
NON-POLAR BLUE LED EPITAXIAL WAFER BASED ON LAO SUBSTRATE AND PREPARATION METHOD THEREFOR |
摘要 |
A non-polar blue LED epitaxial wafer based on an LAO substrate and the preparation method therefor. The preparation method comprises the following steps: a) using the LAO substrate (10), selecting the crystal orientation, and cleaning the surface of the LAO substrate (S1); b) annealing the LAO substrate, and forming an AlN seed crystal layer on the surface of the LAO substrate (S2); and c) sequentially forming a non-polar m side GaN buffer layer (11), a non-polar non-doped u-GaN layer (12), a non-polar n-type doped GaN film (13), a non-polar InGaN/GaN quantum well (14), a non-polar m side AlGaN electron barrier layer (15) and a non-polar p-type doped GaN film (16) on the LAO substrate by using metallo-organic chemical vapor deposition (S3). With the non-polar blue LED epitaxial wafer based on the LAO substrate and the preparation method thereof, the non-polar blue LED epitaxial wafer has the advantages of low defect density, good crystal quality and good luminous performance; and the preparation cost is low. |
申请公布号 |
WO2015144023(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
WO2015CN74828 |
申请日期 |
2015.03.23 |
申请人 |
SHANGHAI CHIPTEK TECHNOLOGY CO., LTD.;JIANGSU ZHUONING OPTOELECTRONICS CO., LTD. |
发明人 |
CAI, ZHUORAN;GAO, HAI;LIU, ZHI;YIN, XIANGLIN;LIU, ZHENGWEI |
分类号 |
H01L33/02 |
主分类号 |
H01L33/02 |
代理机构 |
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