发明名称 INTEGRATED CIRCUIT DEVICE FEATURING AN ANTIFUSE AND METHOD OF MAKING SAME
摘要 One feature pertains to an integrated circuit that includes an antifuse having a conductor-insulator-conductor structure. The antifuse includes a first conductor plate, a dielectric layer, and a second conductor plate, where the dielectric layer is interposed between the first and second conductor plates. The antifuse transitions from an open circuit state to a closed circuit state if a programming voltage V PP greater than or equal to a dielectric breakdown voltage V BD of the antifuse is applied to the first conductor plate and the second conductor plate. The first conductor plate has a total edge length that is greater than two times the sum of its maximum width and maximum length dimensions. The first conductor plate's top surface area may also be less than the product of its maximum length and maximum width.
申请公布号 WO2015148944(A1) 申请公布日期 2015.10.01
申请号 WO2015US23031 申请日期 2015.03.27
申请人 QUALCOMM INCORPORATED 发明人 WANG, ZHONGZE;ZHU, JOHN, JIANHONG;LI, XIA
分类号 H01L27/10;H01L23/525;H01L27/112 主分类号 H01L27/10
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