| 摘要 |
A method for manufacturing an integrated circuit comprises the step for removing silicon oxide by a pre-cleaning process. The pre-cleaning process comprises the following steps: depositing a halogen-containing material on the surface of a substrate in a first reaction chamber; and transferring the substrate having the halogen-containing material to a second reaction chamber. The silicon oxide material has the halogen-containing material sublimated in the second chamber to remove from the surface of the substrate. A target material like a conductive material is deposited on the surface of the substrate in the second reaction chamber. |
